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  single phase ac controller PSW1C112 i rms = 112 a subassemblies v rrm = 800-1400 v preliminary data sheet powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 subassembly ? 2005 powersem reserves the right to change limits, test conditions and dimensions data according to iec 60747 refer to a single thyristor unless otherwise stated symbol test conditions maximum ratings i rms t c = 85 c; 50-400 hz (per single controller) 112 a i trms 81 a i tavm t c = 85 c; 180 sine 51 a i tsm t vj = 45 c t = 10 ms (50 hz), sine 1000 a v r = 0 t = 8.3 ms (60 hz), sine 1070 a t vj = 125 c t = 10 ms (50 hz), sine 870 a v r = 0 t = 8.3 ms (60 hz), sine 930 a i 2 dt t vj = 45 c t = 10 ms (50 hz), sine 5000 a2s v r = 0 t = 8.3 ms (60 hz), sine 4750 a2s t vj = 125 c t = 10 ms (50 hz), sine 3780 a2s v r = 0 t = 8.3 ms (60 hz), sine 3590 a2s (di/dt) cr t vj = 125 c repetitive, i t = 50 a 100 a/s f=50hz, t p =200s v d =2/3v drm i g =0.45 a non repetitive,i t = i tavm 500 a/s di g /dt=0.45a/s (dv/dt) cr t vj = 125 c v d =2/3v drm 1000 v/s r gk = , method 1 (linear voltage rise) p gm t vj = 125 c t p =30s 10 w i t =i tavm t p =300s 5w p gavm 0.5 w v rgm 10 v t vj -40... + 150 c t vjm 150 c t stg -40... + 125 c weight typ. 8 g v rsm v rrm type v dsm v drm (v) (v) 900 800 psw1c 112/08 1300 1200 psw1c 112/12 1500 1400 psw1c 112/14 features ? ? planar glass passivated chips ? low forward voltage drop ? leads suitable for pc board soldering applications ? solid state relays advantages ? space and weight savings ? improved temperature and power cycling capability ? high power density ? small and light weight
subassembly powersem gmbh, w alpersdorfer str. 53 d - 91126 schwabach phone: 09122 - 9764 - 0 fax: 09122 - 9764 - 20 ? 2005 powersem reserves the right to change limits, test conditions and dimensions package style and outline dimensions in mm (1mm = 0.0394?) symbol test conditions characteristic value i d, i r t vj = 125c, v r = v rrm , v d =v drm 5ma v t i t = 150 a, t vj = 25 c 1.57 v v to for power-loss calculations only 0.85 v r t 5.6 m ? v gt v d =6v t vj = 25c 1.5 v t vj =-40c 1.9 v i gt v d =6v t vj = 25c 100 ma t vj =-40c 200 ma v gd t vj = 125c v d =2/3v drm 0.2 v i gd t vj = 125c v d =2/3v drm 1ma i l t vj = 25c, t p =10s 200 ma i g =0.45a, di g /dt=0.45a/s i h t vj = 25c, v d =6v, r gk = ? 100 ma t gd t vj = 25c, v d =1/2v drm 2s i g =0.45a, di g /dt=0.45a/s r thjc per thyristor; dc 0.8 k/w per module 0.4 k/w a max. allowable acceleration 50 m/s2 ?


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